Wire-bond transmission line rc circuit

ABSTRACT

Disclosed are apparatus and associated methodology providing for fixed components that exhibit tailorable variations in frequency response depending on the applied frequencies over the component&#39;s useful frequency range. The presently disclosed subject matter provides improved operational characteristics of generally known transmission line capacitor devices by providing a parallel resistive component constructed as a portion of the dielectric separating electrodes corresponding to a capacitor.

PRIORITY CLAIM

This application claims the benefit of previously filed U.S. ProvisionalPatent Application entitled “WIRE-BOND TRANSMISSION LINE RC CIRCUIT,”assigned U.S. Ser. No. 62/149,992, filed Apr. 20, 2015, and which isincorporated herein by reference for all purposes.

FIELD OF THE SUBJECT MATTER

The presently disclosed subject matter relates to wire-bond transmissionline resistor-capacitor (RC) circuits. In particular, the presentlydisclosed subject matter relates to improvements in such wire-bonddevices that provide for fixed components that exhibit tailoredvariations in frequency response depending on the applied frequenciesover the component's useful frequency range.

BACKGROUND OF THE SUBJECT MATTER

Transmission line capacitor circuits may be used in various formsincluding for DC blocking when placed in series with a transmissionline, for RF and source bypassing when in shunt with a transmission lineor RF source, and for impedance matching among other applications. Suchdevices operate by passively adjusting the impedance characteristic ofthe signal pathway and have applicability in a broad range ofapplications including optical transceiver modules, broadband receivers,Transmit Optical Sub-Assemblies (TOSA), Receive Optical Sub-Assemblies(ROSA), and various other high frequency devices.

Known wire-bond transmission line capacitive devices have been developedthat respond to many of such uses but have not provided a device thatmeets current desirable operational requirements such as the ability totailor responses over the usable frequency range of the device. It wouldbe advantageous, therefore, if a device could be developed that could betailored to provide differing responses from the device over thedevice's useful frequency range.

SUMMARY OF THE SUBJECT MATTER

In view of the recognized features encountered in the prior art andaddressed by the presently disclosed subject matter, improvedapparatuses and methodologies have been developed that provide fortailoring differing responses over the useful operating frequency of thedevice.

In accordance with one aspect of an exemplary embodiment of thepresently disclosed subject matter, a parallel connected RC circuit hasbeen provided wherein the primary response of the device operating atrelatively lower frequencies is tailored to that of the RCtime-constant, while at higher frequencies the device response is basedmore on the capacitive component. In some embodiments of the presentlydisclosed subject matter, a layer of resistive material is placedbetween some or all of the area between electrodes corresponding to acapacitor structure to form a parallel resistor-capacitor (RC)structure.

In accordance with another aspect of presently disclosed subject matter,a parallel RC circuit may be configured in some instances based on thestructure of a transmission line. In exemplary selected embodiments,such transmission line may include a backside ground.

In accordance with additional aspects of exemplary embodiments of thepresently disclosed subject matter, the transmission line RC circuit maybe provided with wire-bond pad structures. In yet further embodiments,the transmission line structure may be provided on various substrates,each providing additional advantageous characteristics to the completedstructure. In particularly advantageous embodiments, the layer ofresistive material may be laser trimmed to provide exact desiredresistive values.

One presently disclosed exemplary embodiment relates to an RC circuitcomponent for insertion in a transmission line, such circuit componentcomprising a monolithic substrate, a capacitor, and a thin-filmresistor. Preferably, such monolithic substrate has a top surface; suchcapacitor is supported on such substrate top surface and has first andsecond electrodes separated at least in part by a dielectric layer; andsuch thin-film resistor is received at least in part between suchcapacitor first and second electrodes, and connected in parallel withsuch capacitor. The frequency response of such RC circuit componentexemplary embodiment depends on the applied frequencies over thecomponent's useful frequency range.

In some variations of such exemplary embodiment, such monolithicsubstrate may have opposing first and second longitudinal ends; and suchcomponent may further comprise a pair of wire bond pads supported onsuch substrate top surface respectively at such first and secondlongitudinal ends thereof, and with such wire bond pads coupledrespectively with such first and second electrodes of such capacitor.

In other alternatives, such thin-film resistor may comprise a layer ofresistive material trimmed to provide an exact desired resistive valuefor tailoring the frequency response of such component. Per furthervariations thereof, such layer of resistive material may comprise atleast one of tantalum nitride (TaN), nickel-chromium alloys (NiCr), andruthenium oxide (RuO2), and have sheet resistance up to about 100Ω.

For other variations, such substrate may comprise at least one of fusedsilica, quartz, alumina, and glass.

In yet other alternative exemplary embodiments, such monolithicsubstrate may have a bottom surface; and such component further maycomprise a ground electrode received on such substrate bottom surface.In others, such first and second electrodes may at least partiallyoverlap; and such resistor may be received in such overlap. For otheralternatives, such dielectric layer may comprise at least one of siliconoxynitride (SiON) and barium titanate (BaTiO3). For yet others, thevalues of such capacitor and resistor may be chosen such that theimpedance at each of such pair of wire bond pads is about 50Ω.

In another presently disclosed exemplary embodiment, a wire-bondtransmission line RC circuit may preferably comprise a monolithicsubstrate having a top surface, a bottom surface, and opposing first andsecond longitudinal ends; a capacitor supported on such substrate topsurface and having a first electrode, and a second electrode at leastpartially overlapping such first electrode so as to define an electrodeoverlap area therebetween, such capacitor further comprising adielectric layer received in at least part of such electrode overlaparea; a pair of wire bond pads, supported on such substrate top surfacerespectively at such first and second longitudinal ends thereof, andcoupled respectively with such first and second electrodes of suchcapacitor; and a thin-film resistor. Per such embodiment, preferablysuch thin-film resistor is received at least in part in such electrodeoverlap area, and connected in parallel with such capacitor, and withsuch thin-film resistor comprising a layer of resistive material formedto provide a determined resistive value for selectively tailoring thefrequency response of such RC circuit over the circuit's usefulfrequency range.

Per variations of such exemplary embodiment, such wire-bond transmissionline RC circuit may further comprise a ground electrode received on suchsubstrate bottom surface. In further such variations, such layer ofresistive material may comprise at least one of tantalum nitride (TaN),nickel-chromium alloys (NiCr), and ruthenium oxide (RuO2), and havesheet resistance up to 100Ω. Further, such substrate may comprise atleast one of fused silica, quartz, alumina, and glass, while suchdielectric layer may comprise at least one of silicon oxynitride (SiON)and barium titanate (BaTiO3).

In other alternatives, the capacitance value of such capacitor and theresistive value of such resistor may be chosen such that the impedanceat each of such pair of wire bond pads is about 50Ω.

It is to be understood from the complete disclosure herewith that thepresently disclosed subject matter equally encompasses correspondingand/or associated methodology. For example, one presently disclosedexemplary embodiment of such encompassed methods relates to methodologyfor tailoring the frequency response of an RC circuit component forinsertion in a transmission line, such circuit component comprising thetype having a monolithic substrate having a top surface, a capacitorsupported on such substrate top surface and having at least partiallyoverlapping first and second electrodes separated at least in part by adielectric layer, with a signal pathway through such circuit component,such methodology comprising including a thin-film resistor received atleast in part between the capacitor first and second electrodes, andconnected in parallel with such capacitor; and forming the resistivevalue of such resistor so as to passively adjust the impedancecharacteristic of the circuit signal pathway for selectively tailoringthe frequency response of such RC circuit component over the circuitcomponent's useful frequency range.

Per some variations of the foregoing exemplary embodiment, suchmethodology may further comprise selecting the capacitance value of suchcapacitor and the resistive value of such resistor so that the primaryresponse of the RC circuit component operating at relatively lowerfrequencies is tailored to that of the RC time-constant, while at higherfrequencies the RC circuit component response is based more on thecapacitive component, so that the fixed RC circuit component hastailored variations in frequency response depending on the appliedfrequencies over the circuit component's useful frequency range.

In other presently disclosed variations, such monolithic substrate mayhave opposing first and second longitudinal ends; and such methodologymay further comprise providing a pair of wire bond pads supported onsuch substrate top surface respectively at said first and secondlongitudinal ends thereof, and with said wire bond pads coupledrespectively with the first and second electrodes of such capacitor.

In other presently disclosed alternatives, such step of forming theresistive value may comprise providing a layer of resistive materialtrimmed to provide an exact desired resistive value for tailoring thefrequency response of such RC circuit component. Per further suchvariations, such layer of resistive material may comprise at least oneof tantalum nitride (TaN), nickel-chromium alloys (NiCr), and rutheniumoxide (RuO2), and has sheet resistance up to about 100Ω.

In other presently disclosed variations, such substrate may comprise atleast one of fused silica, quartz, alumina, and glass; and suchmonolithic substrate may have a bottom surface, so that such methodologyalso may further comprise providing a ground electrode received on suchsubstrate bottom surface.

Pet yet other alternatives, such dielectric layer may comprise at leastone of silicon oxynitride (SiON) and barium titanate (BaTiO3). Also, thecapacitance value of such capacitor and the resistive value of suchresistor may be chosen such that the impedance at each of said pair ofwire bond pads is about 50Ω.

Still further, per presently disclosed alternative methodologies, suchmonolithic substrate may have a bottom surface; and such step of formingthe resistive value may comprise providing a layer of resistive materialtrimmed to provide an exact desired resistive value for tailoring thefrequency response of such RC circuit component; and such methodologymay further comprise providing a ground electrode received on suchsubstrate bottom surface.

Additional embodiments of the presently disclosed subject matter are setforth in, or will be apparent to, those of ordinary skill in the artfrom the detailed description herein. Also, it should be furtherappreciated that modifications and variations to the specificallyillustrated, referred and discussed features and elements hereof may bepracticed in various embodiments and uses of the subject matter withoutdeparting from the spirit and scope of the subject matter. Variationsmay include, but are not limited to, substitution of equivalent means,features, or steps for those illustrated, referenced, or discussed, andthe functional, operational, or positional reversal of various parts,features, steps, or the like.

Still further, it is to be understood that different embodiments, aswell as different presently preferred embodiments, of the presentlydisclosed subject matter may include various combinations orconfigurations of presently disclosed features, steps, or elements, ortheir equivalents (including combinations of features, parts, or stepsor configurations thereof not expressly shown in the figures or statedin the detailed description of such figures). Additional embodiments ofthe presently disclosed subject matter, not necessarily expressed in thesummarized section, may include and incorporate various combinations ofaspects of features, components, or steps referenced in the summarizedobjects above, and/or other features, components, or steps as otherwisediscussed in this application. Those of ordinary skill in the art willbetter appreciate the features and aspects of such embodiments, andothers, upon review of the remainder of the specification.

BRIEF DESCRIPTION OF THE DRAWINGS

A full and enabling disclosure of the presently disclosed subjectmatter, including the best mode thereof, directed to one of ordinaryskill in the art, is set forth in the specification, which makesreference to the appended figures, in which:

FIG. 1 illustrates the internal configuration of a previously knowntransmission line and series capacitor construction;

FIG. 2 illustrates graphic response curves related to the previouslyknown device illustrated in FIG. 1;

FIG. 3 illustrates an equivalent circuit diagram for the previouslyknown device illustrated in FIG. 1;

FIG. 4 illustrates exemplary internal configuration of a transmissionline including a resistor and parallel connected capacitor in accordancewith the presently disclosed subject matter;

FIG. 5 illustrates graphic response curves related to the exemplarydevice illustrated in FIG. 4;

FIG. 6 illustrates an equivalent circuit diagram for the exemplarydevice illustrated in FIG. 4;

FIG. 7 illustrates graphic response curves related to an embodiment ofthe previously known device of FIG. 1 but constructed using analternative substrate material;

FIG. 8 illustrates an equivalent circuit diagram for the exemplarydevice illustrated in FIG. 1 using the alternative substrate material;

FIG. 9 illustrates graphic response curves related to the deviceillustrated in FIGS. 4 using the alternative substrate material; and

FIG. 10 illustrates an equivalent circuit diagram for the exemplarypresently disclosed device illustrated in FIG. 4 constructed using thealternative substrate material.

Repeat use of reference characters throughout the present specificationand appended drawings is intended to represent same or analogousfeatures or elements.

DETAILED DESCRIPTION OF THE SUBJECT MATTER

As discussed in the Summary of the Subject Matter section, the presentlydisclosed subject matter is particularly concerned with improvements towire-bond parallel connected RC devices that provide for tailored fixedcomponents that exhibit variations in frequency response depending onthe applied frequencies over the component's useful frequency range.

Selected combinations of aspects of the disclosed technology correspondto a plurality of different embodiments of the presently disclosedsubject matter. It should be noted that each of the exemplaryembodiments presented and discussed herein should not insinuatelimitations of the presently disclosed subject matter. Features or stepsillustrated or described as part of one embodiment may be used incombination with aspects of another embodiment to yield yet furtherembodiments. Additionally, certain features may be interchanged withsimilar devices or features not expressly mentioned which perform thesame or similar function.

Reference is made hereafter in detail to the presently preferredembodiments of the subject parallel wire-bond transmission line RCcircuit. Referring to the drawings, FIG. 1 illustrates a previouslyknown transmission line capacitor 100 constructed on substrate 102.Capacitor 100 is provided with wire-bond pads 104, 106 positioned atopposite ends 108, 110, respectively of substrate 102. A relativelysmall value capacitor is formed by the overlapping arrangement ofelectrodes 112, 114, which electrodes are coupled to wire-bond pads 104,106, respectively. In such known construction, the capacitor may have avalue of 2 pF and the substrate may be constructed from fused silica.Known similar devices provide for constructing substrates of quartz,alumina, glass and other substances. For example, FIGS. 7 and 8 alsoillustrate characteristics of a known device similar to that illustratedin FIG. 1 but constructed on an alumina substrate.

FIGS. 2 and 3 illustrate characteristics of the known device of FIG. 1with FIG. 2 illustrating response curves for the device while FIG. 3illustrates an equivalent circuit 300 for the device of FIG. 1.

In accordance with such known device, capacitor 100 may correspond to asilicon oxynitride (SiON) capacitor having a first electrode 112 thereofcoupled to wire bond pad 104 on fused silica substrate 102. Capacitor100 also includes a second electrode 114 at least partially below firstelectrode 112 and separated therefrom via a SiON layer (not seen in thisview). Electrode 114 is coupled to wire bond pad 106. A backsideelectrode 116 functions as a ground plane for the assembled device.

With reference to FIG. 2, there are illustrated graphic response curves200 related to the device illustrated in FIG. 1. Those of ordinary skillin the art will appreciate that the notations S₁₁ and S₂₁ representreflection and forward transmission coefficients, respectively, for thetransmission line circuit 100. As illustrated in FIG. 2, the forwardtransmission coefficients S₂₁ and reflected coefficients S₁₁ for a highfrequency structural simulator (HFSS) simulated model of device 100 andfor that of the equivalent circuit illustrated in FIG. 3, track exactlyand are thus illustrated together with common respective S₁₁ and S₂₁notations. As illustrated in FIG. 2, the frequency scale of such examplecorresponds to 100-30,000 MHz so that the resonance point as illustratedby the dip in the S₁₁ line is about 15,425 MHz. Of special interest isthe fact that the forward transmission coefficient S₂₁ line is virtuallyflat over the entire useful operating range after rising rapidly fromthe lower frequency operating range according with the value of thecapacitor.

With reference to FIG. 3, there is illustrated an equivalent circuitdiagram for the exemplary device illustrated in FIG. 1. As noted aboveand illustrated in FIG. 2, the response curves for the equivalentcircuit track exactly the HFSS simulation of the circuit. In suchexample, transmission line 302 had a width of 0.24 mm and a length of0.584 mm while transmission line 304 had a width of 0.2 mm and a lengthof 0.4 mm. Capacitor 312 had a value of 1.931 pF, an equivalent seriesresistance 314 of 0.013Ω, and an equivalent series inductance 322 of0.011 nH. The transmission line structure produced a characteristicimpedance (Z₀) of 50Ω at both the input port 316 and output port 318.

With reference to FIG. 4, an exemplary embodiment of an internalconfiguration of a transmission line 400 including a thin-film resistor422 and parallel connected capacitor 426 in accordance with thepresently disclosed subject matter is illustrated. From a comparisonwith the device illustrated in FIG. 1 and that of FIG. 4 constructed inaccordance with the presently disclosed subject matter, it will benoticed that the internal components have some similarities but with theexception of the inclusion of thin-film resistor 422. Thus, generally,transmission line 400 is constructed on a top surface 430 of substrate402 and includes a first electrode 412 thereof coupled to wire bond pad404 positioned on one longitudinal end 408 of substrate 402, and asecond electrode 414 below first electrode 412 and at least partiallyoverlapped by first electrode 412.

First electrode 412 is at least partially separated from secondelectrode 414 by SiON layer 428 and also at least partially separatedfrom second electrode 414 by thin-film resistor 422. Electrode 414 iscoupled to wire bond pad 406 at a second longitudinal end 410 ofsubstrate 402. A backside electrode 416 is provided on a bottom surface432 of substrate 402 and functions as a ground plane for the assembleddevice.

As with the device illustrated in FIG. 1, substrate 402 may also beconstructed from fused silica. Thin-film resistor 422 may correspond toa tantalum nitride (TaN) layer having 25 to 100Ω sheet resistance. Itshould be appreciated, however, by those of ordinary skill in the artthat other resistive materials may be used in addition to or in place ofTaN. Other suitable materials include, but are not limited to,nickel-chromium alloys (NiCr) and ruthenium oxide (RuO₂). Such thin-filmresistors may be trimmed using laser techniques well known in the art toprovide precision resistor values for use with the presently disclosedsubject matter. Likewise, it should be appreciated that materials otherthan SiON may be used for the dielectric material for capacitor 426including, but not limited to, barium titanate.

With reference to FIG. 5, there are illustrated graphic response curves500 related to the exemplary device illustrated in FIG. 4. From aninspection of FIG. 5, it will be noticed that the forward transmissioncoefficient S₂₁ for both a HFSS simulated model and for that of theequivalent circuit illustrated in FIG. 6, track exactly and are thusillustrated as a single line S₂₁. Similarly, the reflection coefficientsS₁₁ for a HFSS simulated model and that of the equivalent circuit alsotrack exactly and are illustrated as single line S₁₁.

An inspection of FIG. 5 shows that the resonance frequency for thedevice illustrated in FIG. 4 is slightly higher on the frequency scalethan that illustrated in the curves 200 of FIG. 2. As with the curvesillustrated in FIG. 2, the frequency scale of such example correspondsto 100-30,000 MHZ so that the resonance point is about 16,200 MHz. Ofinterest here is the fact that the forward transmission coefficient S₂₁is seen to gradually increase at the lower end of the operating range ofthe exemplary device, according to the RC (Resistor Capacitor) product,before flattening out in the mid to upper operating frequency ranges.Such response is due to the inclusion of thin-film resistor 422 whichprovides the desired tailorable variations in frequency response independence on the applied frequencies and particular construction of thecapacitive and resistive components over the component's usefulfrequency range.

With reference to FIG. 6, there is illustrated an equivalent circuitdiagram 600 for the device illustrated in FIG. 4. In such example,transmission line 602 had a width of 0.203 mm and a length of 0.239 mmwhile transmission line 604 had a width of 0.194 mm and a length of0.269 mm. Capacitor 612 had a value of 2.502 pF, an equivalent seriesresistance 622 of 0.428Ω, and an equivalent series inductance 614 of1.283e-3 nH. Parallel connected resistor 620 had a value of 20.617Ω. Thetransmission line structure produced a characteristic impedance (Z₀) of50Ω at both the input port 616 and output port 618.

FIG. 7 illustrates graphic response curves 700 related to an embodimentof the previously known device of FIG. 1 constructed using analternative substrate material, for example, in such case, alumina. Asmay be seen by comparison with the graph of FIG. 2 wherein the substratewas made of fused silica, the reflection coefficient S₁₁ overall has asteeper slope and the resonance frequency is slightly higher. Theforward transmission coefficient S₂₁ rises significantly faster at thelower frequencies than did that of the graph of FIG. 2 and thereafterremains substantially flat for the entire useful operating frequencyrange. Again in both a modeled and equivalent circuit, the S₁₁ and S₂₁values track exactly and are thus illustrated in FIG. 7 as single lines.It should be noted that the frequency range associated with the graphsof FIG. 7 as well as that of FIG. 8 described herein, correspond to arange of 100 to 50000 MHz.

FIG. 8 illustrates an equivalent circuit diagram 800 for the deviceillustrated in FIG. 1 using an alumina substrate. As noted above andillustrated in FIG. 7, the response curves for the equivalent circuittrack exactly a simulation of the circuit. In such example, transmissionline 802 had values of Z=46.174Ω and L=6.03° while transmission line 804had values of Z=40.51Ω and L=26.415°. Capacitor 812 had a value of 2.416pF, an equivalent series resistance 814 of 0.401Ω and an equivalentseries inductance 822 of 0.022 nH. The transmission line structureproduced a characteristic impedance (Z₀) of 50Ω at both the input port816 and output port 818.

FIG. 9 illustrates graphic response curves 900 related to an embodimentof the presently disclosed subject matter illustrated in FIG. 4constructed using an alumina substrate. As may be seen by comparisonwith the graph of FIG. 5 wherein the substrate was made of fused silica,the reflection coefficient S₁₁ overall has a steeper slope and theresonance frequency is slightly higher. The forward transmissioncoefficient S₂₁ rises slightly faster at the lower frequencies than didthat of the graph of FIG. 5 and thereafter remains substantially flatfor the entire useful operating frequency range. Again, in both the HFSSmodeled and equivalent circuit, the S₁₁ and S₂₁ values track exactly andare thus illustrated in FIG. 7 as single lines.

FIG. 10 illustrates an equivalent circuit diagram 1000 for the exemplarydevice illustrated in FIG. 4 but using an alumina substrate. As notedabove and illustrated in FIG. 9, the response curves for the equivalentcircuit track exactly a simulation of the circuit. In such example,transmission line 1002 had values of Z=49.186Ω and L=20.924° whiletransmission line 1004 had values of Z=49.023Ω and L=25.192°. Capacitor1012 had a value of 2.646 pF, an equivalent series resistance 1014 of0.389Ω, and an equivalent series inductance 1022 of 0.021 nH. Parallelresistor 1024 had a value of 2Ω and had an equivalent series inductance1026 of 0.01 nH. The transmission line structure produced acharacteristic impedance (Z₀) of 50Ω at both the input port 1016 andoutput port 1018.

While the presently disclosed subject matter has been described indetail with respect to specific embodiments thereof, it will beappreciated that those skilled in the art, upon attaining anunderstanding of the foregoing may readily produce alterations to,variations of, and equivalents to such embodiments. Accordingly, thescope of the present disclosure is by way of example rather than by wayof limitation, and the subject disclosure does not preclude inclusion ofsuch modifications, variations and/or additions to the presentlydisclosed subject matter as would be readily apparent to one of ordinaryskill in the art.

1.-26. (canceled)
 27. An RC circuit component for insertion in atransmission line, comprising: a monolithic substrate having a topsurface; a capacitor supported on the substrate top surface and havingfirst and second electrodes separated at least in part by a dielectriclayer; and a thin-film resistor, wherein at least a portion of thethin-film resistor is received between the first and second electrodesand connected in parallel with the capacitor; wherein the portion of thethin-film resistor that is received between the first and secondelectrodes has a resistance of about 2 ohms or greater.
 28. The RCcircuit component of claim 27, wherein: the monolithic substrate hasopposing first and second longitudinal ends; and the component furthercomprises a pair of wire bond pads supported on the substrate topsurface respectively at the first and second longitudinal ends thereof,and with the wire bond pads coupled respectively with the first andsecond electrodes of the capacitor.
 29. The RC circuit component ofclaim 27, wherein the thin-film resistor comprises a layer of resistivematerial that is trimmed to provide the resistance of the thin-filmresistor.
 30. The RC circuit component of claim 27, wherein the layer ofresistive material comprises ruthenium oxide (RuO₂).
 31. The RC circuitcomponent of claim 27, wherein said layer of resistive materialcomprises at least one of tantalum nitride (TaN) or nickel-chromiumalloys (NiCr).
 32. The RC circuit component of claim 27, wherein thelayer of resistive material has a sheet resistance up to about 100Ω. 33.The RC circuit component of claim 27, wherein the substrate comprises atleast one of fused silica or quartz.
 34. The RC circuit component ofclaim 27, wherein the substrate comprises at least one of alumina orglass.
 35. The RC circuit component of claim 27, wherein: the monolithicsubstrate has a bottom surface; and the component further comprises aground electrode received on the substrate bottom surface.
 36. The RCcircuit component of claim 27, wherein the dielectric layer comprisessilicon oxynitride (SiON)
 37. The RC circuit component of claim 27,wherein the dielectric layer comprises barium titanate (BaTiO₃).
 38. TheRC circuit component of claim 27, wherein the monolithic substrate has agenerally planar bottom surface and opposing generally planar first andsecond longitudinal ends.
 39. The RC circuit component of claim 38,wherein the RC circuit component comprises: a pair of wire bond padssupported on the substrate top surface respectively at the generallyplanar first and second longitudinal ends thereof, the pair of wire bondpads respectively coupled with the first and second electrodes of thecapacitor; and a ground electrode received on the generally planarbottom surface of the substrate.
 40. An RC circuit component forinsertion in a transmission line, comprising: a monolithic substratehaving a top surface; a capacitor supported on the substrate top surfaceand having first and second electrodes separated at least in part by adielectric layer; and a thin-film resistor, wherein at least a portionof the thin-film resistor is received between the first and secondelectrodes and connected in parallel with the capacitor; wherein aforward transmission coefficient, S₂₁ of the parallel RC circuitequalizer is greater than −1.9 dB at 100 MHz.
 41. The RC circuitcomponent of claim 40, wherein the forward transmission coefficient,S₂₁, of the parallel RC circuit equalizer is greater than −1.9 dB forfrequencies ranging from 100 MHz to 30,000 MHz.
 42. The RC circuitcomponent of claim 40, wherein the thin-film resistor comprises a layerof resistive material that is trimmed to provide the resistance of thethin-film resistor.
 43. The RC circuit component of claim 40, whereinthe layer of resistive material comprises ruthenium oxide (RuO₂). 44.The RC circuit component of claim 40, wherein said layer of resistivematerial comprises at least one of tantalum nitride (TaN) ornickel-chromium alloys (NiCr).
 45. The RC circuit component of claim 40,wherein the layer of resistive material has a sheet resistance up toabout 100Ω.
 46. The RC circuit component of claim 40, wherein thesubstrate comprises at least one of fused silica or quartz.
 47. The RCcircuit component of claim 40, wherein the substrate comprises at leastone of alumina or glass.
 48. The RC circuit component of claim 40,wherein: the monolithic substrate has a bottom surface; and thecomponent further comprises a ground electrode received on the substratebottom surface.
 49. The RC circuit component of claim 40, wherein thedielectric layer comprises silicon oxynitride (SiON)
 50. The RC circuitcomponent of claim 40, wherein the dielectric layer comprises bariumtitanate (BaTiO₃).
 51. The RC circuit component of claim 40, wherein theRC circuit component comprises: a pair of wire bond pads supported onthe substrate top surface respectively at the generally planar first andsecond longitudinal ends thereof, the pair of wire bond padsrespectively coupled with the first and second electrodes of thecapacitor; and a ground electrode received on the generally planarbottom surface of the substrate.
 52. A method for tailoring thefrequency response of an RC circuit component for insertion in atransmission line, the circuit component comprising a monolithicsubstrate having a top surface, a capacitor supported on the top surfaceof the substrate and having at least partially overlapping first andsecond electrodes separated at least in part by a dielectric layer, themethod comprising: providing a thin-film resistor received at least inpart between the first and second electrodes, and connected in parallelwith the capacitor; and trimming a resistive layer of the thin-filmresistor to provide a desired resistance of the thin-film resistor thatis about 2 ohms or greater.